R3559TC28N thyristor

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration

. Blocking capabilty up to 2800 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Categories Capsule type device, R type thyristor

R3559TC28N thyristor

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		3559		A	Sinewave,180^o conduction,T_S=55^oC
RMS value of on-state current	I_TRMS		5587		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		38900		A	10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		7.5×10⁶		A²s	10.0 msec
Latching current	I_L		1000		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		500		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		1.95		V	I_TM = 5000 A; Tj = 125 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		800		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		300		A/ms	Switching from V_DRM £ 1000 V

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