R1275NS21L high power thyristor

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration

. Blocking capabilty up to 2000 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Categories Capsule type device, R type thyristor

R1275NS21L high power thyristor

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		1275			Sinewave,180^o conduction,T_sink=55^oC
Peak one cPSTCle surge (non repetitive) current	ITSM		15500		A	10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC
I square t	I2t		1.2×106		A2s	10.0 msec
Latching current	IL		1000		mA	VD = 24 V; RL= 12 ohms
Holding current	IH		500		mA	VD = 24 V; I = 2.5 A
Peak on-state voltage	VTM		1.9		V	ITM = 2000 A; Tj = 125 oC
Critical rate of rise of on-state current (5, 6)	di/dt		200		A/ms	Switching from VDRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		100		A/ms	Switching from VDRM £ 1000 V

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