N1467NS160 high power thyristor

N1467NS160 high power thyristor

Features:

. All Diffused Structure

. Center Amplifying Gate Configuration

. Blocking capabilty up to 2000 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Categories N type hyristor, Capsule type device

Description

N1467NS160 high power thyristor

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		1467		A	Sinewave,180^o conduction,T_c=55^oC
Peak one cPSTCle surge (non repetitive) current	I_TSM		21500		A A	10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		2.3×10⁶		A²s	10.0 msec
Latching current	I_L		800		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		400		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		1.69		V	I_TM = 2550 A; Duty cPSTCle £ 0.01% T_j = 125 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		1000		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		500		A/ms	Switching from V_DRM £ 1000 V